| 摘要 |
PROBLEM TO BE SOLVED: To provide a junction field effect transistor in which a high gate voltage can be utilized and in which an on-stage resistance is reduced in the junction field effect transistor. SOLUTION: The junction field effect transistor includes a channel semiconductor region 34 located between a source electrode S and a drain electrode D, and made of an n-GaN in which electron moves; a gate semiconductor region 32 adjoining the channel semiconductor region 34, and made of a p-Al<SB>O.3</SB>Ga<SB>O.7</SB>N having a band gap larger than the band gap of the channel semiconductor region 34; and a gate electrode G which contacts the gate semiconductor region 32 electrically. COPYRIGHT: (C)2006,JPO&NCIPI
|
