发明名称 |
Incorporating dopants to enhance the dielectric properties of metal silicates |
摘要 |
The present invention provides a method of forming a high-k dielectric layer on a semiconductor wafer. A metal silicate dielectric layer is initially deposited on the wafer. A dopant having dissociable oxygen is introduced into the metal silicate on the wafer. According to one embodiment the metal silicate comprises a group IV metal and the dopant is an oxide of one of an alkaline metal and an alkaline earth metal. According to another embodiment the metal silicate comprises a group III metal.
|
申请公布号 |
US2006166496(A1) |
申请公布日期 |
2006.07.27 |
申请号 |
US20060389643 |
申请日期 |
2006.03.23 |
申请人 |
LSI LOGIC CORPORATION |
发明人 |
LO WAI;HORNBACK VERNE;CATABAY WILBUR G.;HSIA WEI-JEN;SUN SEY-SHING |
分类号 |
H01L21/4763;H01L21/3115;H01L21/316 |
主分类号 |
H01L21/4763 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|