发明名称 Reduced volume, high conductance process chamber
摘要 A vacuum processing apparatus including a process chamber having a plurality of pumping ports, and a plurality of pumping cells each connected to a respective pumping port of the plurality of pumping ports. The plurality of pumping ports is preferably located on a lower wall of the process chamber adjacent to a process chamber volume. A process chamber is also provided that includes a lower wall and a side wall, where the side wall has a height of about four inches. The vacuum processing apparatus further includes a chamber liner configured to displace open volume within the process chamber.
申请公布号 US2006162656(A1) 申请公布日期 2006.07.27
申请号 US20050521444 申请日期 2005.01.14
申请人 TOKYO ELECTRON LIMITED 发明人 FINK STEVEN T.
分类号 C23C16/00;C23C14/56;C23C16/44;C23F1/00;H01J37/32;H01L21/00;H05H1/24 主分类号 C23C16/00
代理机构 代理人
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