发明名称 Substrate for thin film formation, thin film substrate, and light-emitting device
摘要 A substrate for forming a thin film composed mainly of gallium nitride, indium nitride or aluminum nitride, the substrate consisting of a sintered compact composed mainly of a ceramic material; and a thin-film substrate furnished with the thin film. The use of the sintered compact composed mainly of a ceramic material, especially translucent sintered compact, as the substrate enables formation thereon of a highly crystalline single-crystal thin film composed mainly of at least one member selected from among gallium nitride, indium nitride and aluminum nitride. Thus, there is provided a thin-film substrate furnished with a highly crystalline single-crystal thin film. Further, the use of the sintered compact composed mainly of a ceramic material enables providing of a light emitting element excelling in luminous efficiency.
申请公布号 US2006163605(A1) 申请公布日期 2006.07.27
申请号 US20050320873 申请日期 2005.12.30
申请人 MIYAHARA KENICHIRO 发明人 MIYAHARA KENICHIRO
分类号 C04B35/453;C04B35/58;C04B35/581;C04B35/645;C30B25/18;C30B29/40;H01L33/32 主分类号 C04B35/453
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