发明名称 |
JUNCTION FIELD-EFFECT TRANSISTOR |
摘要 |
A junction field-effect transistor (20) comprises an n-type semiconductor layer (1) having a channel region, a buffer layer (3) formed on the channel region, and p<SUP>+</SUP> regions (4a, 4b) formed on the buffer layer (3). The electron concentration of the buffer (3) is lower than that of the semiconductor layer (1). The electron concentration of the buffer layer (3) is preferably a tenth or less of the electron concentration of the semiconductor layer (1). With this, the threshold voltage can be easily controlled, and the channel saturated current density can be easily controlled. |
申请公布号 |
WO2006077674(A1) |
申请公布日期 |
2006.07.27 |
申请号 |
WO2005JP16481 |
申请日期 |
2005.09.08 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD.;FUJIKAWA, KAZUHIRO;HARADA, SHIN |
发明人 |
FUJIKAWA, KAZUHIRO;HARADA, SHIN |
分类号 |
H01L21/337;H01L29/80;H01L29/808 |
主分类号 |
H01L21/337 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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