发明名称 Mask transformation system for manufacturing of semiconductor circuit, has connection mask structure transversely aligned in sections to dipole axis and formed on mask, where structure connects main mask structures with each other
摘要 <p>The system has a mask (25) for manufacturing of semiconductor structures on a wafer by transformation of the mask on the wafer. The mask has main mask structures (20) parallel to a transformation axis (x) that is running perpendicular to a dipole axis (y). A connection mask structure (23) that is transversely aligned in sections to the dipole axis is formed on the mask and connects the main mask structures with each other. Independent claims are also included for the following: (A) a method of manufacturing a semiconductor circuit with a transformation system (B) an application of a transformation system for manufacturing of a semiconductor circuit.</p>
申请公布号 DE102005003185(A1) 申请公布日期 2006.07.27
申请号 DE20051003185 申请日期 2005.01.19
申请人 INFINEON TECHNOLOGIES AG 发明人 MOUKARA, MOLELA;WINKLER, THORSTEN;ZEILER, KARSTEN;THIELE, JOERG;KOESTLER, WOLFRAM;HENNIG, MARIO
分类号 G03F7/20 主分类号 G03F7/20
代理机构 代理人
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