| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method for a chip also forming a circuit even on a rear. <P>SOLUTION: The rear of a semiconductor wafer W is coated with a resist, and a pattern is formed by carrying out an exposure/a developing. The semiconductor wafer W (Si) is etched until an oxide film is exposed, a bottom oxide film is also removed by an etching, the circuit formed on the A surface side is exposed, the resist is removed by an ashing, and a contact hole is formed by a washing by chemicals. The oxide film is formed on the surface of the contact hole by a deposition method, the oxide film in a section extensively over the circuit on the A surface side is removed by the etching, and a barrier seed (TiN/Cu) is formed after the washing by chemicals. A Cu plating is carried out and a dry film (a resist film) is stuck, the pattern is formed by the exposure/the developing, the resist film is removed after the etching, and the circuit on the rear side is formed. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
