| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a solid-state imaging device in which output voltage can be enlarged by reducing the volume of a detection capacity part. <P>SOLUTION: The solid-state imaging device of the present invention keeps a semiconductor substrate overlaid with a photodiode 101 which performs the photoelectric transformation of an incident radiation to a signal charge, a transfer transistor which transfers the signal charge accumulated in the photodiode 101, a detection capacity part 104 which accumulates the signal charge transferred by the transfer transistor, and a resetting transistor which discharges the signal charge accumulated in the detection capacity part 104 to a drain. The solid-state imaging device has a structure where an ionic species 111 which supplies the carrier of the polarity opposite to that of the channel is distributed in at least a side wall of a channel under a gate electrode 108 of the resetting transistor. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
