发明名称 TFT SUBSTRATE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To simplify a manufacturing method of a thin film transistor (TFT) substrate by using a transparent conductor material containing a specific metal for pixel electrodes and transparent electrodes. SOLUTION: This is a TFT substrate used in a display device and has a transparent substrate, pixel electrodes provided on the transparent substrate to control the pixels of the display device, and thin film transistors provided on the above transparent substrate to drive the pixel electrodes. The above thin film transistors include at least Al gate electrodes, gate insulator films, 1st semiconductor layers, 2nd semiconductor layers, and Al source-drain electrodes. The above pixel electrodes are in direct contact with the Al gate electrodes and/or Al source-drain electrodes and are made of conductive oxides consisting mainly of zinc oxides. Since no barrier metal is used between the transparent conductor film and the Al wiring, the manufacturing method is simplified that much. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006195086(A) 申请公布日期 2006.07.27
申请号 JP20050005637 申请日期 2005.01.12
申请人 IDEMITSU KOSAN CO LTD 发明人 INOUE KAZUYOSHI;MATSUBARA MASAHITO;TANAKA NOBUO
分类号 G09F9/30;G02F1/1343;G02F1/1368;H01B5/14;H01B13/00;H01L21/336;H01L29/786 主分类号 G09F9/30
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