| 摘要 |
PROBLEM TO BE SOLVED: To assure a sufficient distance between source/drain diffusion region areas and to inhibit the generation of a leakage current in an nMOS transistor simultaneously by making the channel region of the above pMOS transistor, to approach a compressive stress generation source which has an SiGe mixed crystal layer in a pMOS transistor as much as possible, and to arrange it in the substrate in a semiconductor integrated circuit device having on a CMOS set on the substrate. SOLUTION: The gate electrode side wall insulating film of the pMOS transistor is formed with a film having an HF resistance, a trench in which the above p-type SiGe mixed crystal layer performs the epitaxial growth to the element region of the pMOS transistor is formed by approaching to the channel region of the above pMOS transistor, and they are formed simultaneously. In the nMOS transistor region, still more nearly another side wall insulating film is formed in the exterior of the side wall insulating film of the gate electrode, and the sufficient distance between an n-type source/drain region formed by ion implantation into the substrate is assured. COPYRIGHT: (C)2006,JPO&NCIPI
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