发明名称 |
MULTIPLE LAYER STRUCTURE FOR SUBSTRATE NOISE ISOLATION |
摘要 |
A method of forming a semiconductor structure, comprising: providing a substrate having a buried insulative layer and a heavily doped layer; forming a first trench within the substrate around a protected area; filling the first trench with an insulative material, wherein the first trench filled with the insulative material and the buried insulative layer combine to form a high impedance noise isolation that surrounds the protected area on all sides except one side of the protected area to isolate noise from the protected area; forming a second trench within the substrate around the first trench; and filling the second trench with a conductive material, wherein the second trench filled with the conductive material and the heavily doped layer combine to form a low impedance ground path that surrounds the high impedance noise isolation on all sides except one side of the high impedance noise isolation to isolate noise from the protected area.
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申请公布号 |
US2006163688(A1) |
申请公布日期 |
2006.07.27 |
申请号 |
US20050905934 |
申请日期 |
2005.01.27 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DING HANYI;FENG KAI D.;HE ZHONG-XIANG;LIU XUEFENG |
分类号 |
H01L21/76;H01L23/552;H01L23/58;H01L29/00 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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