发明名称 Semiconductor device and manufacturing method thereof
摘要 [Summary][Problem]A TFT is manufactured using at least five photomasks in a conventional liquid crystal display device, and therefore the manufacturing cost is high. [Solving Means] By performing the formation of the pixel electrode 127 , the source region 123 and the drain region 124 by using three photomasks in three photolithography steps, a liquid crystal display device prepared with a pixel TFT portion, having a reverse stagger type n-channel TFT, and a storage capacitor can be realized.
申请公布号 US2006163574(A1) 申请公布日期 2006.07.27
申请号 US20060387800 申请日期 2006.03.24
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;KUWABARA HIDEAKI;ARAI YASUYUKI
分类号 H01L31/0376 主分类号 H01L31/0376
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