| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting diode wherein the number of manufacturing steps can be more reduced than heretofore. <P>SOLUTION: The light emitting diode is provided with a GaN (or AlN) buffer layer as a plurality of semiconductor layer, an n-type GaN layer, an n-type AlGaN layer, an InGaN light emission layer 2, a p-type AlGaN, and a p-type GaN layer on an SiC substrate 1. It is also provided with a p electrode 4 on the surface of the p-type GaN layer, and an n electrode 5 on the lower surface of the SiC substrate 1. Furthermore, it is provided with a groove 3 which reaches the light emission layer 2 from the surface of the p-type GaN layer and has a V-shaped cross section. The groove 3 is formed by both a first plane 3a that the light emission layer 2 exposes in the cross section, and a second plane 3b facing the first plane 3a. The first plane 3a is at about 90° to the surface of the uppermost p-type GaN layer, while the second plane 3b is at about 45° to the first plane 3a. The groove 3 is exposed by the same gas that the surface of the uppermost p-type GaN layer is in contact with. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
