| 摘要 |
<P>PROBLEM TO BE SOLVED: To reliably etch a semiconductor whose surface roughness is large. <P>SOLUTION: From the surface side of a semiconductor, the formation process of a mask layer 42 is performed. In the formation process of the mask layer 42, the mask layer, where undulations 41 are buried in a region which is etched prior to the etching process in which targeted etching is made, and a smooth surface on which the undulations are vanished is formed, is covered and formed. From the surface side of the mask layer, an etching process is performed. In the etching process, a smooth surface, where the undulations 41 are removed under etching conditions in which etching properties to the semiconductor and the mask layer 42 are equal, is set. After that, an etching process to be targeted is performed. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
