发明名称 SEMICONDUCTOR DEVICE WITH CONTROLLED OF DIE WARPAGE, AND MANUFACTURING METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving the electrical and process reliability by controlling warpage of its die, and to provide its manufacturing method. SOLUTION: This semiconductor device is equipped with a first substance layer that covers a chip-size substrate and substrate formed on the foregoing substrate with first materials. In this first substance layer, there are one or more first stress relaxing patterns that cross the first substance layer so that it is divided into two or more parts. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006196899(A) 申请公布日期 2006.07.27
申请号 JP20060004185 申请日期 2006.01.11
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 SEO HYEOUNG-WON
分类号 H01L21/768;H01L23/12;H01L23/522 主分类号 H01L21/768
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