发明名称 |
SEMICONDUCTOR DEVICE WITH CONTROLLED OF DIE WARPAGE, AND MANUFACTURING METHOD THEREFOR |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving the electrical and process reliability by controlling warpage of its die, and to provide its manufacturing method. SOLUTION: This semiconductor device is equipped with a first substance layer that covers a chip-size substrate and substrate formed on the foregoing substrate with first materials. In this first substance layer, there are one or more first stress relaxing patterns that cross the first substance layer so that it is divided into two or more parts. COPYRIGHT: (C)2006,JPO&NCIPI
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申请公布号 |
JP2006196899(A) |
申请公布日期 |
2006.07.27 |
申请号 |
JP20060004185 |
申请日期 |
2006.01.11 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
SEO HYEOUNG-WON |
分类号 |
H01L21/768;H01L23/12;H01L23/522 |
主分类号 |
H01L21/768 |
代理机构 |
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主权项 |
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地址 |
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