TWO-STEP OXIDATION PROCESS FOR SEMICONDUCTOR WAFERS

摘要

The invention relates to an efficient method for the thermal oxidation of preferably silicon semiconductor wafers while using the LOCOS process (Local Oxidation Of Silicon). The mechanical stresses to which the wafers are subjected should be reduced. To this end, the invention provides an oxidation method involving the provision of a substrate (1) with a front side (12) that is to be structured and with a rear side (13). The substrate is oxidized in two steps. During a first step, the rear side (13) is covered with a layer (4) that inhibits an oxidation. During a second step of oxidation, the oxidation-inhibiting layer (4) no longer exists. During both steps, an oxide thickness (D10) greater than that on the rear side (13) results on the front side (12).