IMPROVED METHOD AND APPARATUS FOR MONITORING A MICROSTRUCTURE ETCHING PROCESS

摘要

An etching monitoring apparatus (1) and related method for use in the manufacture of microstructures (2) (and in particular MEMS) located within an etching chamber (3) is described. The apparatus (1) and related method operates by setting the temperature of the chamber (3) within which the microstructure (2) is located at a starting temperature, and maintaining the partial pressure of an etching gas within the chamber (3) at a constant value. As a result the surface temperature o f the microstructure (2) within the chamber (3) is primarily determined by the etch rate. Therefore, by employing a thermometer (8) to monitor the change in etching surface temperature, a direct diagnostic for monitoring the etching process is provided.