| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing solution for CMP, with which a barrier metal of TaN or Ta and SiO<SB>2</SB>of a substrate can continuously be polished, and a phenomenon (fang) where the barrier metal of TaN or Ta close to a copper alloy thin film can be trimmed more deeply than other SiO<SB>2</SB>, and to provide a polishing method of the substrate using the polishing solution. <P>SOLUTION: The CMP polishing solution for semiconductor metal film is 5 mV or higher which comprises silica particles whose zeta-potential measured by an electrophoresis method. Oxidant, a protective film forming agent, with respect to a metal surface, acid and water, and the substrate where the film to be polished, is formed are pressed against a polishing cloth of a polishing plate so as to pressurize them. The substrate and the polishing plate are moved and the film to be polished is polished, while the CMP polishing solution for semiconductor metal film is supplied between the polishing film and the polishing cloth. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
