| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a silicon wafer which prevents slip generation by suppressing the temperature difference within the wafer surface at the time of temperature rising. SOLUTION: A wafer is loaded onto a vertical boat which is placed in the vertical furnace for heat treatment kept at the temperature in the furnace of 600°C, and is raised to 800°C by a temperature rising rate of 5°C/min. Then, the heater of the furnace for heat treatment is turned off for 5 minutes kept with a temperature fall rate of 7.5°C/min. The heater is again turned on after 5 minutes elapse. After temperature rise of 200°C by the same temperature rising rate, again, it is kept for 5 minutes by the same temperature fall rate. A step of temperature rise and a step of temperature fall are repeated at every change of 200°C so that the temperature in the furnace may be raised to 1,200°C. Subsequently, the temperature in the furnace is maintained at 1,200°C for 1 hour. Finally, the temperature in the furnace is fallen to 600°C. COPYRIGHT: (C)2006,JPO&NCIPI
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