| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing device capable of uniformly introducing reactive feed gas into a plurality of discharge spaces. SOLUTION: A semiconductor element manufacturing device has a sealable chamber 11, and an anode 4 and cathode electrodes 2, 2 are arranged in the chamber 11. Then, plasma is discharged in two discharge spaces by the reactive raw material gas introduced into the chamber 11. Glass substrates 1, 1 are arranged on both the surfaces of the anode electrode 4. The device is equipped with a gas cylinder 7 of the feed gas, and a gas inlet pipe 10 connected to the gas cylinder 7. The gas inlet pipe 10 comprises a gas branch section 6 in the chamber 11, one main pipe 10a for connecting the gas cylinder 7 to the gas branch section 6, and two branch pipes 10b, 10b that are connected to the main pipe 10a via the gas branch pipe 6 and reach each discharge space. The length of the branch pipes 10b, 10b is made equal. COPYRIGHT: (C)2006,JPO&NCIPI
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