| 发明名称 |
FILM FORMING MATERIAL AND FILM FORMING METHOD |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a low dielectric constant material suited to interlayer insulation films which improves the process time of signals. SOLUTION: The method of forming a film on a substrate by the chemical vapor deposition method comprises a step of feeding (i-C<SB>3</SB>H<SB>7</SB>)<SB>2</SB>Si(OCH<SB>3</SB>)<SB>2</SB>, and a step of depositing a deposition product by depositing the fed (i-C<SB>3</SB>H<SB>7</SB>)<SB>2</SB>Si(OCH<SB>3</SB>)<SB>2</SB>onto the substrate. COPYRIGHT: (C)2006,JPO&NCIPI
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| 申请公布号 |
JP2006196624(A) |
申请公布日期 |
2006.07.27 |
| 申请号 |
JP20050005675 |
申请日期 |
2005.01.12 |
| 申请人 |
TRI CHEMICAL LABORATORY INC |
发明人 |
MACHIDA HIDEAKI;MURAMOTO IKUYO;JO EIKA |
| 分类号 |
H01L21/316;C08G77/06;C23C16/42 |
主分类号 |
H01L21/316 |
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