发明名称 Method of forming metal layer pattern and method of manufacturing image sensor using the same
摘要 A method of forming a metal layer pattern comprises forming an interlayer insulating layer on a semiconductor substrate, forming a metal layer on the interlayer insulating layer, forming a mask pattern to expose a predetermined area of the metal layer, and forming a metal layer pattern by dry etching the exposed predetermined area of the metal layer with a substrate bias power of about 5 W to about 40 W.
申请公布号 US2006166481(A1) 申请公布日期 2006.07.27
申请号 US20060328765 申请日期 2006.01.10
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM GYOO-DONG;HWANGBO YOUNG-BUM;OH JONG-MIN
分类号 H01L21/4763 主分类号 H01L21/4763
代理机构 代理人
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