| 发明名称 |
PROTECTING SILICON GERMANIUM SIDEWALL WITH SILICON FOR STRAINED SILICON SILICON MOSFETS |
| 摘要 |
Raised Si/SiGe source and drain regions include epitaxially grown silicon on SiGe sidewalls. The epi silicon prevents adverse effects of Ge during silicidation, including Ge out diffusion and silicide line breakage. The Si also increases the active area.
|
| 申请公布号 |
US2006163608(A1) |
申请公布日期 |
2006.07.27 |
| 申请号 |
US20060278910 |
申请日期 |
2006.04.06 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ZHU HUILONG;DORIS BRUCE B.;MOCUTA DAN M. |
| 分类号 |
H01L31/0328;H01L21/336;H01L29/06;H01L29/10;H01L29/78;H01L29/786 |
主分类号 |
H01L31/0328 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
