Light emitting diode and fabricating method thereof

摘要

A light emitting diode and the method of the same are provided. A light emitting diode epitaxy structure is formed on a substrate, and then the light emitting diode epitaxy structure is etched to form a recess. The recess is then filled with a transparent dielectric material. An ohmic contact layer and a reflective layer are formed sequentially, and then are etched to expose the transparent dielectric material. Finally, forming an adhesive conductive complex layer to fix the ohmic contact layer and the reflective layer on the light emitting diode epitaxy structure.