InGaN LED PUMPED II-VI SEMICONDUCTOR LASER

摘要

An optically pumped semiconductor laser (20) in accordance with the present invention includes a II-VI semiconductor laser chip (22). A plurality of InGaN LEDs (50) provides optical pump light for optically pumping the laser chip (22). An optical arrangement (52, 56) collects the pump light from the LEDs (50) and directs the pump light to light-concentrating optical device (44) that is either directly or indirectly in optical contact with the laser chip (22) and is arranged to concentrate the pump light (54C) on the chip (22) with maximized numerical aperture (NA). In one example of the laser, the light-concentrating device (44) is an immersion lens. In another example of the laser, the light-concentrating device is a tapered light-pipe.