CMP POLISHING METHOD, CMP POLISHING APPARATUS, AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE

摘要

This invention provides a CMP polishing method that, when a hydrophobilized porous material is used as an interlayer insulation film material for a semiconductor integrated circuit formed on a substrate, after washing and removal of a slurry and a polishing residue, which stay on the substrate surface, with a surfactant-containing washing liquid, an organic material permeated in the interlayer insulation film can be efficiently removed. When washing is carried out with a washing liquid containing a surfactant to remove the residual slurry and polishing residue, the organic material contained in the surfactant-containing washings is permeated in the interlayer insulation film (3). Thereafter, the substrate is washed with an organic solvent or an organic solvent-containing solution to wash away the organic material permeated in the interlayer insulation film (3). Although the interlayer insulation film (3) is in a hydrophobilized state, since the organic solvent is used for the washing, the organic material permeated in the interlayer insulation film (3) can be dissolved and washed away without being influenced by the hydrophobilized state.