| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device suitable for high integration by reducing the circuit scale of a column system circuit by decreasing especially the number of sense amplifier circuits, data latch circuits, and verify-circuits. <P>SOLUTION: The device is provided with a threshold value detecting means detecting threshold voltage of a memory cell, in the threshold value detection, it is discriminated whether the memory cell is in a "1" state or "2" or "3" or ..."n" state by applying first threshold value detecting voltage (CG2A1V) to the gate electrode of the memory cell, and further, first, second, ..., (n-1)th threshold value detecting voltage are applied to the gate electrode of the memory cell so that it is discriminated whether the memory cell is in a "1" or "2" state or "3" or ..."n" state by applying second threshold value detecting voltage (CG2A2V) to the gate electrode of the memory cell. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
