发明名称 |
Phase-change memory device and manufacturing process thereof |
摘要 |
Phase-change memory device, wherein memory cells (2) are arranged in rows (7) and columns (6) and form a memory array. The memory cells (2) are formed by a selection device (4) of an MOS type and by a phase-change region (3) connected to the selection device. The selection device (4) is formed by a first conductive region (32) and a second conductive region (33), which extend in a substrate (31) of semiconductor material and are spaced from one another via a channel region (34), and by an isolated control region (36) connected to a respective row (7) and overlying the channel region (34). The first conductive region (32) is connected to a connection line (42) extending parallel to the rows, the second conductive region (33) is connected to the phase-change region (46), and the phase-change region is connected to a respective column (6). The first connection line (42) is a metal interconnection line and is connected to the first conductive region (32) via a source-contact region (40) made as point contact and distinct from the first connection line (42).
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申请公布号 |
EP1684352(A1) |
申请公布日期 |
2006.07.26 |
申请号 |
EP20050425024 |
申请日期 |
2005.01.21 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
ZULIANI, PAOLA;PELLIZZER, FABIO;BEZ, ROBERTO |
分类号 |
H01L27/24 |
主分类号 |
H01L27/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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