发明名称 |
UV-blocking layer for reducing UV-induced charging of sonos dual-bit flash memory devices in beol processing |
摘要 |
A method of protecting a SONOS flash memory cell from UV-induced charging, including fabricating a SONOS flash memory cell in a semiconductor device; and depositing over the SONOS flash memory cell at least one UV-protective layer, the UV-protective layer including a substantially UV-opaque material. A SONOS flash memory device, including a SONOS flash memory cell; and at least one UV-protective layer, in which the UV-protective layer comprises a substantially UV-opaque material, is provided. In one embodiment, the device includes a substantially UV-opaque contact cap layer. |
申请公布号 |
GB2413438(B) |
申请公布日期 |
2006.07.26 |
申请号 |
GB20050015646 |
申请日期 |
2004.01.08 |
申请人 |
ADVANCED MICRO DEVICES, INC |
发明人 |
MINH VAN NGO;TAZRIEN KAMAL;MARK T RAMSBEY;ARVIND HALLIYAL;JAEYONG PARK;NING CHENG;JEFF P ERHARDT;JEFFREY A. SHIELDS;CLARENCE FERGUSON;ANGELA T HUI;ROBERT A HUERTAS;TYAGAMOHAN GOTTIPATI |
分类号 |
H01L29/792;H01L21/28;H01L21/336;H01L23/552;H01L27/115 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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