发明名称 PULSED PLASMA PROCESSING METHOD AND APPARATUS
摘要 In a method for performing a plasma-assisted treatment on a substrate in a reactor chamber by: introducing at least one process gas into the reactor chamber; and creating a plasma within the reactor chamber by establishing an RF electromagnetic field within the chamber and allowing the field to interact with the process gas, the electromagnetic field is controlled to have an energy level which varies cyclically between at least two values each sufficient to maintain the plasma, such that each energy level value is associated with performance of a respectively different treatment process on the substrate.
申请公布号 EP1214459(A4) 申请公布日期 2006.07.26
申请号 EP20000952656 申请日期 2000.08.09
申请人 TOKYO ELECTRON LIMITED 发明人 JOHNSON, WAYNE, L.;STRANG, E.
分类号 F16K31/02;H01J37/32;B01J19/08;C23C16/505;C23C16/515;C23C16/517;H01L21/302;H01L21/3065;H01L21/311 主分类号 F16K31/02
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