发明名称 |
Laser mask and crystallization method using the same |
摘要 |
<p>A crystallization method includes providing a substrate having a silicon thin film; positioning a laser mask having first to fourth blocks on the substrate, each block having a periodic pattern including a plurality of transmitting regions and a blocking region; and crystallizing the silicon thin film by irradiating a laser beam through the laser mask. A polycrystalline silicon film crystallized by this method is substantially free from a shot mark, and has uniform crystalline characteristics.</p> |
申请公布号 |
GB2410125(B) |
申请公布日期 |
2006.07.26 |
申请号 |
GB20040028246 |
申请日期 |
2004.12.23 |
申请人 |
LG. PHILIPS LCD CO., LTD. |
发明人 |
JAESUNG YOU |
分类号 |
G02F1/136;H01L21/20;B23K26/06;H01L21/268;H01L21/336;H01L21/77;H01L21/84;H01L29/04;H01L29/786 |
主分类号 |
G02F1/136 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|