| 发明名称 |
METHOD OF MANUFACTURING GROUP-III NITRIDE COMPOUND SEMICONDUCTOR DEVICE |
| 摘要 |
<p>A preferred condition for forming a Group III nitride compound semiconductor layer on a substrate by a sputtering method is proposed. When a first Group III nitride compound semiconductor player is formed on a substrate by a sputtering method, an initial voltage of a sputtering apparatus is selected to be not higher than 110 % of a sputtering voltage. <IMAGE></p> |
| 申请公布号 |
EP1296363(B1) |
申请公布日期 |
2006.07.26 |
| 申请号 |
EP20010921940 |
申请日期 |
2001.04.20 |
| 申请人 |
TOYODA GOSEI CO., LTD. |
发明人 |
SENDA, MASANOBU;ITO, JUN;CHIYO, TOSHIAKI;SHIBATA, NAOKI;ASAMI, SHIZUYO |
| 分类号 |
H01L21/203;C23C14/00;C23C14/06;C30B23/02;H01L23/00;H01L33/06;H01L33/12;H01L33/32;H01S5/323;H01S5/343 |
主分类号 |
H01L21/203 |
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