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发明名称
Ferroelectric memory device and method of forming the same
摘要
申请公布号
KR100605101(B1)
申请公布日期
2006.07.26
申请号
KR20030096635
申请日期
2003.12.24
申请人
发明人
分类号
H01L27/105
主分类号
H01L27/105
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代理人
主权项
地址
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