发明名称 |
PROCESS FOR PRODUCING SILICON EPITAXIAL WAFER |
摘要 |
<p>For a silicon single crystal substrate PW to which boron, arsenic or phosphorus is added as a dopant in a concentration of 1×10 19 /cm 3 or more and in which a CVD oxide film 1 is formed on a rear surface, wet etching of an oxide film on a main surface of the silicon single crystal substrate PW is performed by a hydrofluoric acid treatment while the CVD oxide film 1 is allowed to remain (step S5). Next, the silicon single crystal substrate PW is baked at 950°C or less in a hydrogen gas to perform dry etching of a natural oxide film on the main surface of the silicon single crystal substrate PW (step S7). Further, a sub-epitaxial layer 2 is formed at a temperature lower than a growth temperature of a main epitaxial layer 3 (step S8) and the main epitaxial layer 3 is formed on the sub-epitaxial layer 2 at a temperature of 900 to 1200°C (step S9) .</p> |
申请公布号 |
EP1684335(A1) |
申请公布日期 |
2006.07.26 |
申请号 |
EP20040772140 |
申请日期 |
2004.08.25 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD |
发明人 |
TAKAMIZAWA, SYO-ICHI;SAYAMA, RYUJI |
分类号 |
H01L21/205;C30B25/02;C30B25/18;C30B29/06;H01L21/306 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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