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发明名称
Method to improve device isolation via fabricationof deeper shallow trench isolation regions
摘要
申请公布号
SG123708(A1)
申请公布日期
2006.07.26
申请号
SG20050007956
申请日期
2005.11.07
申请人
CHARTERED SEMICONDUCTOR MANUFACTURING LTD
发明人
GUOWEI ZHANG
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主分类号
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