| 摘要 |
A light emitting device having a simple structure that can be easily manufactured, attaining high light emitting efficiency stably for a long time is obtained, which light emitting device includes: a GaN substrate (1) as a nitride semiconductor substrate and, on a first main surface of the nitride semiconductor substrate, an n-type Al x Ga 1-x N layer (3), a p-type Al x Ga 1-x N layer (5) positioned further than the n-type Al x Ga 1-x N layer (3) viewed from the nitride semiconductor substrate, and a quantum well (4) positioned between the n-type Al x Ga 1-x N layer (3) and the p-type Al x Ga 1-x N layer (5). In the light emitting device, specific resistance of the nitride semiconductor substrate is at most 0.5 ©€¢cm, the side of p-type Al x Ga 1-x N layer (5) is mounted face-down, and the light is emitted from the second main surface 1a that is opposite to the first main surface of the nitride semiconductor substrate. The second main surface 1a of nitride semiconductor substrate has trenches (80) formed therein. |
