| 摘要 |
<p>The invention provides a vapor phase growth process utilizing a growth reactor for forming a large area, uniformly low dislocation density single crystal III-V nitride material on a substrate, said process comprising: (i) a first phase including one or more steps of growing the III-V nitride material on the substrate by a vapor phase growth technique under pitted growth conditions; and (ii) a second phase including one or more steps of growing the III-V nitride material by the vapor phase growth technique under pit-filling conditions effecting closure of pits and annihilation of defects on a growth surface of the III-V nitride material, wherein the process further comprises at least one of the following items (a) and (b):
(a) any of the first phase and the second phase comprises a flow of any of ammonia and hydrogen chloride to the growth reactor, and the second phase comprises a lower ratio of flow of ammonia to flow of hydrogen chloride relative to the first phase; and
(b) upon conclusion of the second phase, the growth surface is essentially pit-free.
The large area, uniformly low dislocation density single crystal III-V nitride material produced by such process is suitable for use as a substrate, for example for the fabrication of microelectronic and/or optoelectronic devices.</p> |
