发明名称 Magnetoresistive sensor with a thin antiferromagnetic layer for pinning antiparallel coupled tabs
摘要 A manufacturing method for a spin valve sensor with a thin antiferromagnetic (AFM) layer exchange coupled to a self-pinned antiparallel coupled bias layer in the lead overlap regions is provided. The spin valve sensor comprises forming a ferromagnetic bias layer antiparallel coupled to a free layer in first and second passive regions where first and second lead layers overlap the spin valve sensor layers and forming a thin AFM layer exchange coupled to the bias layer to provide a pinning field to the bias layer. A cap layer is deposited over the thin AFM layer.
申请公布号 SG123583(A1) 申请公布日期 2006.07.26
申请号 SG20030007131 申请日期 2003.11.28
申请人 HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V. 发明人 GILL HARDAYAL SINGH
分类号 G11B5/39;H01L43/08 主分类号 G11B5/39
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