| 摘要 |
A method for manufacturing a semiconductor memory device in which a bit line and a storage electrode of a capacitor are connected to an active area of a semiconductor substrate (101), respectively, via a contact pad (117a,117b) formed in a self-aligning manner. The method includes the steps of forming gate electrodes (320) on the semiconductor substrate (310), the gate electrodes (320) being covered with a nitride spacer (322). Then, a thermal oxide layer (323) is formed on the exposed surface of the semiconductor substrate between the gate electrodes. Then, an etch stop layer (325) is formed on the entire surface of the resultant structure having the thermal oxide layer to an appropriate thickness such that the space between the gate electrodes is not buried. Then, a first oxide layer (327) is formed in the space between the gate electrodes and a second oxide layer (329) is formed on the first oxide layer (327). A polysilicon layer (331) is then formed on the second oxide layer (329), the polysilicon layer (331), the second oxide layer (329), the first oxide layer (331), the etch stop layer (325) and the thermal oxide layer (323) are then etched partially in sequence to form a landing pad hole (A) and a landing pad (340) is formed in the landing pad hole.
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