发明名称 |
MULTI-BIT NONVOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
<p>Multi-bit nonvolatile memory devices and related methods of manufacturing the same are described. In some multi-bit nonvolatile memory devices, a semiconductor substrate has a recessed region defined therein. An insulating layer, which can include an ONO layer, is configured to store data within programming regions therein, and covers a sidewall and a lower surface of the recess region. A gate electrode is on the insulating layer in the recessed region. At least one pair of impurity regions are in the semiconductor substrate. The impurity regions adjoin a side surface of the insulating layer in the recess region and form a relative angle that is less than 120° therebetween with respect to a center of the gate electrode.</p> |
申请公布号 |
KR20060084631(A) |
申请公布日期 |
2006.07.25 |
申请号 |
KR20050005403 |
申请日期 |
2005.01.20 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, SUNG MIN;YUN, EUN JUNG |
分类号 |
H01L27/115 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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