发明名称 |
Method of manufacturing bulk single crystal of gallium nitride |
摘要 |
The present invention provides a process for forming a bulk monocrystalline gallium nitride by using supercritical ammonia. The process comprises the steps of forming a supercritical solvent containing ion or ions of alkali metals in an autoclave; and dissolving a monocrystalline gallium nitride prepared by flux methods as a feedstock in this supercritical solvent to form a supercritical solution, and simultaneously or separately recrystallizing gallium nitride on the face of a seed.
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申请公布号 |
US7081162(B2) |
申请公布日期 |
2006.07.25 |
申请号 |
US20040479856 |
申请日期 |
2004.06.04 |
申请人 |
NICHIA CORPORATION;AMMONO SP ZOO |
发明人 |
DWILINSKI ROBERT;DORADZINSKI ROMAN;GARCZYNSKI JERZY;SIERZPUTOWSKI LESZEK;KANBARA YASUO |
分类号 |
C30B25/12;C30B7/10;C30B9/00 |
主分类号 |
C30B25/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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