发明名称 |
Semiconductor photodetection device and fabrication process thereof |
摘要 |
A semiconductor photodetection device includes a photodetection layer formed of an alternate and repetitive stacking of an optical absorption layer accumulating therein a compressive strain and a stress-compensating layer accumulating therein a compensating tensile strain, wherein the optical absorption layer has a thickness larger than a thickness of the stress-compensating layer.
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申请公布号 |
US7081639(B2) |
申请公布日期 |
2006.07.25 |
申请号 |
US20010873264 |
申请日期 |
2001.06.05 |
申请人 |
FUJITSU QUANTUM DEVICES LIMITED |
发明人 |
UCHIDA TORU;ANAYAMA CHIKASHI |
分类号 |
C23C16/30;H01L31/0304;H01L21/205;H01L31/0352;H01L31/10;H01L31/105 |
主分类号 |
C23C16/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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