发明名称 THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF
摘要 The present invention provides a method of manufacturing a TFT array panel in a cost-effective manner. The method includes: forming thin film transistors each having a gate electrode, a source electrode, and a drain electrode; forming an insulating layer on the thin film transistors; forming a first conductive layer electrically connected to the drain electrodes on the insulating layer; forming a second conductive layer on the first conductive layer; forming a photoresist layer including first portions and second portions thinner than the first portions; selectively etching the second conductive layer with a first etchant by using the photoresist layer as an etch blocker; and selectively etching the first conductive layer with a second etchant by using the photoresist layer and the second conductive layer as etch blockers.
申请公布号 KR20060084589(A) 申请公布日期 2006.07.25
申请号 KR20050005305 申请日期 2005.01.20
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHO, NEUNG HO;KIM, SUNG WOOK;PARK, YONG KIL;JUNG, BAE HYOUN;CHAE, DONG YUB;CHOI, YOUN SOO
分类号 G02F1/136;G02F1/1368;G09F9/30 主分类号 G02F1/136
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