发明名称 |
Gain-clamped semiconductor optical amplifier having horizontal lasing structure and manufacturing method thereof |
摘要 |
A gain-clamped semiconductor optical amplifier having a horizontal lasing structure in which an oscillation direction of a laser is different from an amplification direction of a signal, and a method for manufacturing the gain-clamped semiconductor optical amplifier. The gain-clamped semiconductor optical amplifier includes a gain layer for amplifying an optical signal. A Bragg lattice layer is formed on both sides of the gain layer along a longitudinal direction of the gain layer for enabling light having a corresponding wavelength to resonate in a direction vertical to the longitudinal direction of the gain layer. A passive light waveguide restrains light resonating between lattices of the Bragg lattice layer. An electrode supplies current to the gain layer, and a current-blocking layer prevents current from flowing to an area other than the gain layer.
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申请公布号 |
US7081643(B2) |
申请公布日期 |
2006.07.25 |
申请号 |
US20040781508 |
申请日期 |
2004.02.18 |
申请人 |
SAMSUMG ELECTRONICS CO., LTD. |
发明人 |
LEE JEONG-SEOK;KANG JUNG-KOO;HWANG SEONG-TAEK |
分类号 |
H01L29/22;H01S5/10;H01S5/00;H01S5/042;H01S5/06;H01S5/12;H01S5/125;H01S5/20;H01S5/227;H01S5/30;H01S5/50 |
主分类号 |
H01L29/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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