发明名称 Method of creating a tapered via using a receding mask and resulting structure
摘要 Embodiments of a method of forming a tapered via using a receding mask are disclosed. In one embodiment, an etch mask formed on a substrate includes a first aperture in a first photoresist layer and a second, larger aperture in an overlying second photoresist layer. Peripheries of the first and second apertures may be tapered as a result of an out-of-focus exposure. An etching process may be performed to create a tapered via in the substrate, and during this etching process, the first, relatively thinner photoresist layer will recede outwardly toward the aperture in the second photoresist layer. Other embodiments are described and claimed.
申请公布号 US7081408(B2) 申请公布日期 2006.07.25
申请号 US20040975572 申请日期 2004.10.28
申请人 INTEL CORPORATION 发明人 LANE RALPH L.;HILL CHARLES D.
分类号 H01L21/4763;H01L23/52 主分类号 H01L21/4763
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