Circuit for verifying the write speed of SRAM cells

摘要

A circuit for measuring the performance of a memory cell. The circuit includes a ring oscillator, which includes a plurality of memory cells. The performance of the memory cell can be determined from an oscillation frequency of the ring oscillator. The circuit accurately verifies the performance of the memory cell without modifying the memory cell. This avoids altering the transient AC characteristics of the memory cell when predicting its performance.