发明名称 Apparatus and method for testing electrode structure for thin display device using FET function
摘要 In a method of testing an electrode structure in which a plurality of electrodes are arranged in a matrix, a test unit is positioned at a position of a target one of the plurality of electrodes apart from the target electrode by a preset distance. The test unit has a MISFET having a source, a gate and a drain. Then, a first voltage is applied to the target electrode such that a gate voltage is induced at the gate by electrostatic induction. Also, a second voltage is applied to at least one of the source and the drain such that current flows between the source and the drain based on the gate voltage. Then, a value of the current is examined to determine an electrical connection state of the target electrode.
申请公布号 US7081908(B2) 申请公布日期 2006.07.25
申请号 US20030717540 申请日期 2003.11.21
申请人 MITSUBISHI HEAVY INDUSTRIES, LTD. 发明人 MURAKAWA SHINICHI;DOI TAKASHI;EGASHIRA YOSHIO;UEDA SHIGEO
分类号 G09G3/36;G02F1/13;G09G3/00 主分类号 G09G3/36
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