Wafer piercing for forming e.g. rate gyro, involves moving pattern parts with respect to each other along direction parallel to wafer side and normal to side and plane intersection, to reduce thickness of lamella separating cavities

摘要

The method involves subjecting a quartz wafer to an etching agent until complete piercing of the wafer at base of an etching pattern by assembly of two cavities (20.1, 20.2). Parts (19.1, 19.2) of the pattern are moved with respect to each other along a direction parallel to a wafer side and normal to an intersection of the wafer side with a slow etching plane in order to reduce thickness of a lamella separating the cavities.