发明名称 |
THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF |
摘要 |
<p>A method of manufacturing a thin film transistor array panel is provided, which includes: forming a thin film transistor including a gate electrode, a drain electrode, a source electrode and a semiconductor on a substrate; forming a first passivation layer on the drain and the source electrodes; forming a transparent conductive layer on the first passivation layer; etching the transparent conductive layer using a photoresist as an etch mask to expose the portion of the first passivation layer and to form a pixel electrode connected the drain electrode; ashing the first passivation layer and the photoresist; and removing the photoresist.</p> |
申请公布号 |
KR20060083743(A) |
申请公布日期 |
2006.07.21 |
申请号 |
KR20050004670 |
申请日期 |
2005.01.18 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK, KYUNG MIN;JUNG, JIN GOO;YOU, CHUN GI |
分类号 |
H01L29/786 |
主分类号 |
H01L29/786 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|