发明名称 THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF
摘要 <p>A method of manufacturing a thin film transistor array panel is provided, which includes: forming a thin film transistor including a gate electrode, a drain electrode, a source electrode and a semiconductor on a substrate; forming a first passivation layer on the drain and the source electrodes; forming a transparent conductive layer on the first passivation layer; etching the transparent conductive layer using a photoresist as an etch mask to expose the portion of the first passivation layer and to form a pixel electrode connected the drain electrode; ashing the first passivation layer and the photoresist; and removing the photoresist.</p>
申请公布号 KR20060083743(A) 申请公布日期 2006.07.21
申请号 KR20050004670 申请日期 2005.01.18
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK, KYUNG MIN;JUNG, JIN GOO;YOU, CHUN GI
分类号 H01L29/786 主分类号 H01L29/786
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