| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming an element isolation film of a semiconductor element which prevents a plasma damage W to occur in the element isolation film forming process. SOLUTION: The method for forming the element isolation film of the semiconductor element contains the steps of patterning a pad film on a semiconductor substrate and a predetermined depth of a semiconductor substrate 10 to form a trench; forming a side wall oxide film 18 in a side wall of the trench; forming a first trench embedding oxide film on the overall surface to perform the levelling process until the pad film is exposed, and to form a first element isolation film 20 defining a non-active region; removing the pad film to expose the semiconductor substrate 10 defining an active region; forming a silicon layer higher than a height of the first element isolation film 20 on the semiconductor substrate 10; and forming a second trench embedding oxide film on the overall surface to perform the levelling process until the silicon layer is exposed, and to form a second element isolation film 23, thereby forming a laminated element isolation film. COPYRIGHT: (C)2006,JPO&NCIPI
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